Invention Application
US20170001861A1 METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL
有权
使用外加材料增加MEMS外壳压力的方法
- Patent Title: METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL
- Patent Title (中): 使用外加材料增加MEMS外壳压力的方法
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Application No.: US15265668Application Date: 2016-09-14
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Publication No.: US20170001861A1Publication Date: 2017-01-05
- Inventor: Cerina ZHANG , Martin LIM , Jongwoo SHIN , Joseph SEEGER
- Applicant: InvenSense, Inc.
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B7/00

Abstract:
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
Public/Granted literature
- US09731963B2 Method of increasing MEMS enclosure pressure using outgassing material Public/Granted day:2017-08-15
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