Invention Application
US20170005009A1 MOSFET DEVICES WITH ASYMMETRIC STRUCTURAL CONFIGURATIONS INTRODUCING DIFFERENT ELECTRICAL CHARACTERISTICS
有权
具有不对称结构配置的MOSFET器件介绍不同的电气特性
- Patent Title: MOSFET DEVICES WITH ASYMMETRIC STRUCTURAL CONFIGURATIONS INTRODUCING DIFFERENT ELECTRICAL CHARACTERISTICS
- Patent Title (中): 具有不对称结构配置的MOSFET器件介绍不同的电气特性
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Application No.: US14754812Application Date: 2015-06-30
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Publication No.: US20170005009A1Publication Date: 2017-01-05
- Inventor: John C. Pritiskutch , Richard Hildenbrandt
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088
Abstract:
First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.
Public/Granted literature
- US09673103B2 MOSFET devices with asymmetric structural configurations introducing different electrical characteristics Public/Granted day:2017-06-06
Information query
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