公开(公告)号：US20170005009A1

公开(公告)日：2017-01-05

申请号：US14754812

申请日：2015-06-30

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

Abstract translation: 具有不同电特性的第一和第二晶体管由具有第一种掺杂剂的衬底支撑。 所述第一晶体管包括在所述衬底内具有所述第一类型掺杂剂的阱区域，所述阱区域内的第一体区域具有第二类型掺杂物和所述第一体区域内的第一源极区域并且沿着所述阱区域横向偏移 第一频道 第二晶体管包括具有第二类型掺杂剂的半导体衬底层内的第二体区域，以及在第二体区内的第二源极区域，并且通过第二通道横向偏离衬底的材料，第二沟道的长度大于 第一频道 栅极区域分别在第一和第二通道的第一和第二主体区域的部分上延伸。

公开(公告)号：US09837320B2

公开(公告)日：2017-12-05

申请号：US15582962

申请日：2017-05-01

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L21/82 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/324 ,  H01L21/225 ,  H01L21/266 ,  H01L27/088 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

公开(公告)号：US09673103B2

公开(公告)日：2017-06-06

申请号：US14754812

申请日：2015-06-30

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

公开(公告)号：US20140138834A1

公开(公告)日：2014-05-22

申请号：US14027370

申请日：2013-09-16

Applicant: STMICROELECTRONICS, INC.

Inventor： John C. Pritiskutch ,  Richard R. Hildenbrandt

IPC: H01L23/532

CPC classification number: H01L29/41716 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate.

Abstract translation: 在一般方面，集成电路封装包括第一电极和支撑衬底上的第二电极。 第一电极和第二电极被配置为电耦合到电压差。 迁移物种的树突状迁移可以在电压差和非密封环境下发展。 树枝状迁移被安装在第一电极和第二电极之间的支撑基板上的浮动电屏障中断。 电气屏障包括防止金属迁移的大坝。 大坝的高度大约等于或大于迁移物种单个原子的最大尺寸。 第一电极和第二电极可以安装在支撑基板的相同侧上，或者安装在支撑基板的两个相对侧上。

公开(公告)号：US20170236758A1

公开(公告)日：2017-08-17

申请号：US15582962

申请日：2017-05-01

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L21/8234 ,  H01L21/324 ,  H01L29/78 ,  H01L21/266 ,  H01L27/088 ,  H01L29/10 ,  H01L21/265 ,  H01L21/225

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

公开(公告)号：US08980747B2

公开(公告)日：2015-03-17

申请号：US14023255

申请日：2013-09-10

Applicant: STMicroelectronics, Inc.

Inventor： Craig J. Rotay ,  John C. Pritiskutch

IPC: H01L21/445 ,  H01L21/48 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L21/4821 ,  H01L23/49517 ,  H01L23/49582 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions.The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration.

Abstract translation: 以受控的方式实现金属离子的预迁移以形成迁移的金属离子，其中施加抑制剂以防止进一步迁移。 在半导体电路中，通过以受控的方式将接合的金属系统暴露于水，氧和电场来实现金属离子的预迁移。 连接到电绝缘材料的导体以这样的方式暴露于电场，以便形成一个或多个阳极到相应的阴极，从而释放金属离子。 然后允许金属离子以受控的方式从阳极朝向阴极迁移以形成预迁移的金属。 最后，将抑制剂施加在预迁移金属的顶部以防止进一步迁移。

公开(公告)号：US20140077346A1

公开(公告)日：2014-03-20

申请号：US14023255

申请日：2013-09-10

Applicant: STMicroelectronics, Inc.

Inventor： Craig J. Rotay ,  John C. Pritiskutch

IPC: H01L21/48 ,  H01L23/495

CPC classification number: H01L21/4821 ,  H01L23/49517 ,  H01L23/49582 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions. The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration.

Abstract translation: 以受控的方式实现金属离子的预迁移以形成迁移的金属离子，其中施加抑制剂以防止进一步迁移。 在半导体电路中，通过以受控的方式将接合的金属系统暴露于水，氧和电场来实现金属离子的预迁移。 连接到电绝缘材料的导体以这样的方式暴露于电场，以便形成一个或多个阳极到相应的阴极，从而释放金属离子。 然后允许金属离子以受控的方式从阳极朝向阴极迁移以形成预迁移的金属。 最后，将抑制剂施加在预迁移金属的顶部以防止进一步迁移。

公开(公告)号：US09018765B2

公开(公告)日：2015-04-28

申请号：US14027370

申请日：2013-09-16

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard R. Hildenbrandt

IPC: H01L29/417 ,  H01L23/00

CPC classification number: H01L29/41716 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate.

Abstract translation: 在一般方面，集成电路封装包括在支撑衬底上的第一电极和第二电极。 第一电极和第二电极被配置为电耦合到电压差。 迁移物种的树突状迁移可以在电压差和非密封环境下发展。 枝晶迁移被安装在第一电极和第二电极之间的支撑衬底上的浮动电屏障中断。 电气屏障包括防止金属迁移的大坝。 大坝的高度大约等于或大于迁移物种单个原子的最大尺寸。 第一电极和第二电极可以安装在支撑基板的相同侧上，或者安装在支撑基板的两个相对侧上。