公开(公告)号：US20170005009A1

公开(公告)日：2017-01-05

申请号：US14754812

申请日：2015-06-30

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

Abstract translation: 具有不同电特性的第一和第二晶体管由具有第一种掺杂剂的衬底支撑。 所述第一晶体管包括在所述衬底内具有所述第一类型掺杂剂的阱区域，所述阱区域内的第一体区域具有第二类型掺杂物和所述第一体区域内的第一源极区域并且沿着所述阱区域横向偏移 第一频道 第二晶体管包括具有第二类型掺杂剂的半导体衬底层内的第二体区域，以及在第二体区内的第二源极区域，并且通过第二通道横向偏离衬底的材料，第二沟道的长度大于 第一频道 栅极区域分别在第一和第二通道的第一和第二主体区域的部分上延伸。

公开(公告)号：US20170236758A1

公开(公告)日：2017-08-17

申请号：US15582962

申请日：2017-05-01

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L21/8234 ,  H01L21/324 ,  H01L29/78 ,  H01L21/266 ,  H01L27/088 ,  H01L29/10 ,  H01L21/265 ,  H01L21/225

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

公开(公告)号：US09837320B2

公开(公告)日：2017-12-05

申请号：US15582962

申请日：2017-05-01

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L21/82 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/324 ,  H01L21/225 ,  H01L21/266 ,  H01L27/088 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.

公开(公告)号：US09673103B2

公开(公告)日：2017-06-06

申请号：US14754812

申请日：2015-06-30

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard Hildenbrandt

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823493 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/7827

Abstract: First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.