发明申请
US20170011947A1 Method of Forming a Flexible Semiconductor Layer and Devices on a Flexible Carrier 有权
在柔性载体上形成柔性半导体层和器件的方法

Method of Forming a Flexible Semiconductor Layer and Devices on a Flexible Carrier
摘要:
A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.
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