公开(公告)号：US09768288B2

公开(公告)日：2017-09-19

申请号：US15237350

申请日：2016-08-15

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Timothy J. McArdle ,  Dirk Pfeiffer ,  Katherine L. Saenger ,  Robert L. Wisnieff

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L29/775 ,  H01L21/30 ,  H01L29/66 ,  H01L21/02 ,  H01L51/00

CPC分类号： H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20170229603A1

公开(公告)日：2017-08-10

申请号：US15497310

申请日：2017-04-26

申请人： International Business Machines Corporation

发明人： Bahman Hekmatshoartabari ,  Ning Li ,  Katherine L. Saenger

IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L31/0445 ,  H01L31/0224

CPC分类号： H01L31/1868 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/186 ,  H02S50/10 ,  Y02E10/547 ,  Y02P70/521

摘要： After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

公开(公告)号：US09704736B2

公开(公告)日：2017-07-11

申请号：US15146021

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/68 ,  H01L21/683 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/027 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L29/04 ,  H01L21/48 ,  H01L21/82 ,  H01L21/762 ,  H01L23/532

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US09659807B2

公开(公告)日：2017-05-23

申请号：US15145986

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/683 ,  H01L21/285 ,  H01L21/308 ,  H01L21/027 ,  H01L21/48 ,  H01L29/04 ,  H01L21/82

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US20170011946A1

公开(公告)日：2017-01-12

申请号：US15145986

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/683 ,  H01L21/308 ,  H01L21/82 ,  H01L21/48 ,  H01L29/04 ,  H01L21/285 ,  H01L21/027

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US09496128B1

公开(公告)日：2016-11-15

申请号：US14884262

申请日：2015-10-15

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Ning Li ,  Katherine L. Saenger

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/31 ,  H01L21/469 ,  H01L23/34 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/6835 ,  B05D1/005 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68368 ,  H01L2221/68381

摘要： Method for a controlled spalling utilizing vaporizable release layers. For example, a method comprises providing a base substrate, depositing a stressor layer and a vaporizable release layer on the base substrate, forming a flexible support layer on at least one of the stressor layer and the vaporizable release layer, spalling an upper portion of the base substrate, securing the spalled upper portion of the base substrate to a handle substrate, and vaporizing the vaporizable release layer.

摘要翻译： 利用可蒸发隔离层控制剥落的方法。 例如，一种方法包括提供基底衬底，在基底衬底上沉积应力层和可汽化隔离层，在至少一个应力层和可汽化隔离层上形成柔性支撑层，剥落上层 将基底基板的剥离的上部固定到手柄基板上，并蒸发可蒸发的脱模层。

公开(公告)号：US20160322226A1

公开(公告)日：2016-11-03

申请号：US15206643

申请日：2016-07-11

申请人： International Business Machines Corporation

发明人： Guy Cohen ,  Katherine L. Saenger ,  Kuen-Ting Shiu

IPC分类号： H01L21/02 ,  H01L21/324

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3247 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/66795

摘要： The present invention provides ART techniques with reduced LER. In one aspect, a method of ART with reduced LER is provided which includes the steps of: providing a silicon layer separated from a substrate by a dielectric layer; patterning one or more ART lines in the silicon layer selective to the dielectric layer; contacting the silicon layer with an inert gas at a temperature, pressure and for a duration sufficient to cause re-distribution of silicon along sidewalls of the ART lines patterned in the silicon layer; using the resulting smoothened, patterned silicon layer to pattern ART trenches in the dielectric layer; and epitaxially growing a semiconductor material up from the substrate at the bottom of each of the ART trenches, to form fins in the ART trenches.

公开(公告)号：US09455179B1

公开(公告)日：2016-09-27

申请号：US14795216

申请日：2015-07-09

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/76 ,  H01L21/768

CPC分类号： H01L21/32051 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/304 ,  H01L21/324 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L29/161 ,  H01L29/20 ,  H01L31/18 ,  H01L2221/68345 ,  H01L2221/68381

摘要： A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.

摘要翻译： 一种方法包括提供具有前表面和后表面的手柄基板; 在所述柔性半导体材料层的背表面上提供具有前表面和后表面以及至少部分牺牲背衬层堆叠的柔性半导体材料层; 将柔性半导体材料层的前表面粘合到手柄基板的前表面; 从所述柔性半导体材料层的后表面去除所述至少部分牺牲背衬层堆叠的至少一部分; 通过柔性半导体材料层打开除气路径; 并处理柔性半导体材料层。

公开(公告)号：US09112068B2

公开(公告)日：2015-08-18

申请号：US13646120

申请日：2012-10-05

申请人： International Business Machines Corporation

发明人： Deborah A. Neumayer ,  Katherine L. Saenger

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2257 ,  H01L21/268 ,  H01L21/76838 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A structure includes a crystalline semiconductor having at least one surface, a doped crystalline region disposed in at least one selected area of the semiconductor surface, and a dopant-containing amorphous silicon layer stack containing a same dopant as present in the doped crystalline region on at least a portion of the semiconductor surface outside the selected area, wherein the dopant-containing amorphous silicon layer stack passivates the portion of the semiconductor surface on which it is disposed.

摘要翻译： 使用含掺杂剂的非晶硅叠层进行掺杂剂源和钝化的晶体半导体激光掺杂的技术和结构。 一种结构包括具有至少一个表面的晶体半导体，设置在半导体表面的至少一个选定区域中的掺杂晶体区域，以及含有掺杂剂的非晶硅层堆叠，其含有与存在于掺杂晶体区域 半导体表面的至少一部分在选定区域之外，其中含掺杂剂的非晶硅层叠层钝化其所在的半导体表面的部分。

公开(公告)号：US20140242746A1

公开(公告)日：2014-08-28

申请号：US13774704

申请日：2013-02-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY

发明人： Abdulrahman M. Albadri ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L31/0224

CPC分类号： H01L31/022475 ,  H01L31/0747 ,  H01L31/1884 ,  Y02E10/50

摘要： A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.

摘要翻译： 一种用于形成光伏器件的方法包括在晶体衬底上形成掺杂层，所述掺杂层具有与衬底相反的掺杂剂导电性。 在低于150摄氏度的温度下，在掺杂层上形成非结晶透明导电电极（TCE）层。 TCE层被闪光退火，以在高于约150摄氏度的温度下使TCE层的材料结晶少于10秒。