公开(公告)号：US09691653B2

公开(公告)日：2017-06-27

申请号：US15145965

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/762 ,  H01L21/683 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/027 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L29/04 ,  H01L21/48 ,  H01L21/82 ,  H01L23/532

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US20170011947A1

公开(公告)日：2017-01-12

申请号：US15146155

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/683 ,  H01L21/3213 ,  H01L21/027 ,  H01L23/528 ,  H01L29/04 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

摘要翻译： 一种用于制造半导体器件的方法包括：提供在半导体衬底的第一表面上包括应力层叠层的预形成的剥落结构; 在所述半导体衬底的暴露的第二表面上形成界面剥离层; 使用环氧树脂将界面剥离层粘合到刚性处理基材上; 从所述半导体衬底的所述第一表面去除所述应力层叠层的至少一部分; 处理半导体衬底; 以及从所述界面剥离层移除所述半导体衬底以赋予所述半导体衬底柔性。

公开(公告)号：US09607854B2

公开(公告)日：2017-03-28

申请号：US15144072

申请日：2016-05-02

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/3205 ,  H01L21/683 ,  H01L29/20 ,  H01L29/161

CPC分类号： H01L21/32051 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/304 ,  H01L21/324 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L29/161 ,  H01L29/20 ,  H01L31/18 ,  H01L2221/68345 ,  H01L2221/68381

摘要： A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.

公开(公告)号：US09548235B1

公开(公告)日：2017-01-17

申请号：US15144171

申请日：2016-05-02

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/683 ,  H01L29/20 ,  H01L29/161 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/304

CPC分类号： H01L21/32051 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/304 ,  H01L21/324 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L29/161 ,  H01L29/20 ,  H01L31/18 ,  H01L2221/68345 ,  H01L2221/68381

摘要： A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.

公开(公告)号：US20170011954A1

公开(公告)日：2017-01-12

申请号：US15146021

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/762

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US20160322513A1

公开(公告)日：2016-11-03

申请号：US14698472

申请日：2015-04-28

申请人： International Business Machines Corporation ,  King Abdulaziz City for Science and Technology

发明人： Yves C. Martin ,  Abdelmajid Salhi ,  Theodore G. van Kessel

IPC分类号： H01L31/02

CPC分类号： H01L31/0201 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

摘要： Grid patterns for concentrator solar cells that increase power output are provided. In one aspect, a top contact for a solar cell is provided that includes: bus connectors and metallic fingers attached to the bus connectors, wherein each of the metallic fingers has a base which is connected to one of the bus connectors or to another one of the metallic fingers such that each of the metallic fingers is attached to one of the bus connectors either directly or indirectly via another one of the metallic fingers, and wherein at least one of the metallic fingers has a width that is tapered quadratically along a length of the metallic finger. A solar cell and a method of forming a solar cell top contact are also provided.

摘要翻译： 提供了增加功率输出的集中器太阳能电池的网格图案。 在一个方面，提供了一种用于太阳能电池的顶部接触件，其包括：连接到总线连接器的总线连接器和金属指状物，其中每个金属指状物具有连接到总线连接器中的一个或另一个 金属指状物，使得每个金属指状物通过另一金属指直接地或间接地附接到一个总线连接器，并且其中金属指状物中的至少一个具有沿着 金属手指。 还提供太阳能电池和形成太阳能电池顶部接触的方法。

公开(公告)号：US09704736B2

公开(公告)日：2017-07-11

申请号：US15146021

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/68 ,  H01L21/683 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/027 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L29/04 ,  H01L21/48 ,  H01L21/82 ,  H01L21/762 ,  H01L23/532

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US09659807B2

公开(公告)日：2017-05-23

申请号：US15145986

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/683 ,  H01L21/285 ,  H01L21/308 ,  H01L21/027 ,  H01L21/48 ,  H01L29/04 ,  H01L21/82

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US20170011946A1

公开(公告)日：2017-01-12

申请号：US15145986

申请日：2016-05-04

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/683 ,  H01L21/308 ,  H01L21/82 ,  H01L21/48 ,  H01L29/04 ,  H01L21/285 ,  H01L21/027

CPC分类号： H01L21/6835 ,  H01L21/02002 ,  H01L21/0276 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/308 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/4828 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/78 ,  H01L21/82 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L29/045 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.

公开(公告)号：US09455179B1

公开(公告)日：2016-09-27

申请号：US14795216

申请日：2015-07-09

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Abdelmajid Salhi

IPC分类号： H01L21/76 ,  H01L21/768

CPC分类号： H01L21/32051 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/304 ,  H01L21/324 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L29/161 ,  H01L29/20 ,  H01L31/18 ,  H01L2221/68345 ,  H01L2221/68381

摘要： A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.

摘要翻译： 一种方法包括提供具有前表面和后表面的手柄基板; 在所述柔性半导体材料层的背表面上提供具有前表面和后表面以及至少部分牺牲背衬层堆叠的柔性半导体材料层; 将柔性半导体材料层的前表面粘合到手柄基板的前表面; 从所述柔性半导体材料层的后表面去除所述至少部分牺牲背衬层堆叠的至少一部分; 通过柔性半导体材料层打开除气路径; 并处理柔性半导体材料层。