Invention Application
- Patent Title: METHOD FOR USE IN MANUFACTURING A SEMICONDUCTOR DEVICE DIE
- Patent Title (中): 用于制造半导体器件芯片的方法
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Application No.: US14792419Application Date: 2015-07-06
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Publication No.: US20170011963A1Publication Date: 2017-01-12
- Inventor: Michaela Braun , Markus Menath
- Applicant: Infineon Technologies AG
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/3065 ; H01L21/683 ; H01L21/66 ; H01L23/31

Abstract:
In one embodiment, a wafer includes a number of die areas each including a semiconductor device and dedicated to become a separate die. The die areas are disposed on a first face of the wafer and wherein adjacent die areas are distanced from one another. A first trench and a second trench are formed on the first face between adjacent die areas. The first trench and the second trench are spaced apart from one another by a ridge. A third trench is disposed above the ridge on a second face of the wafer.
Public/Granted literature
- US09553022B1 Method for use in manufacturing a semiconductor device die Public/Granted day:2017-01-24
Information query
IPC分类: