METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL

Invention Application

US20170018518A1 METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL 审中-公开

Title translation: 通过焊球覆盖通过基板制造半导体器件的方法

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Patent Title: METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL
Patent Title (中): 通过焊球覆盖通过基板制造半导体器件的方法
Application No.: US15283189

Application Date: 2016-09-30
Publication No.: US20170018518A1

Publication Date: 2017-01-19
Inventor: Cathal CASSIDY , Martin SCHREMS , Franz SCHRANK
Applicant: ams AG
Priority: EP11190389.4 20111123
Main IPC: H01L23/00
IPC: H01L23/00

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL

Abstract:

A semiconductor substrate is provided with a through-substrate via comprising a metallization and an opening. A solder ball is placed on the opening. A reflow of the solder ball is performed in such a way that the solder ball closes the through-substrate via and leaves a void in the through-substrate via.

Abstract(Chinese):

半导体衬底设置有包括金属化和开口的贯穿衬底通孔。焊球放置在开口处。焊球的回流以这样的方式进行，使得焊球闭合贯穿基板通孔，并在通孔中留下空隙。

Public/Granted literature

US09773729B2 Method of producing a semiconductor device with through-substrate via covered by a solder ball Public/Granted day:2017-09-26

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）