公开(公告)号：US20170018518A1

公开(公告)日：2017-01-19

申请号：US15283189

申请日：2016-09-30

Applicant: ams AG

Inventor： Cathal CASSIDY ,  Martin SCHREMS ,  Franz SCHRANK

IPC: H01L23/00

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/552 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10125 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/30101 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

Abstract: A semiconductor substrate is provided with a through-substrate via comprising a metallization and an opening. A solder ball is placed on the opening. A reflow of the solder ball is performed in such a way that the solder ball closes the through-substrate via and leaves a void in the through-substrate via.

Abstract translation: 半导体衬底设置有包括金属化和开口的贯穿衬底通孔。 焊球放置在开口处。 焊球的回流以这样的方式进行，使得焊球闭合贯穿基板通孔，并在通孔中留下空隙。

公开(公告)号：US20170365551A1

公开(公告)日：2017-12-21

申请号：US15691654

申请日：2017-08-30

Applicant: ams AG

Inventor： Cathal CASSIDY ,  Martin SCHREMS ,  Franz SCHRANK

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48 ,  H01L23/532 ,  H01L23/552 ,  H01L25/065

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/552 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10125 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/30101 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

Abstract: A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.

公开(公告)号：US20170179183A1

公开(公告)日：2017-06-22

申请号：US15455055

申请日：2017-03-09

Applicant: ams AG

Inventor： Cathal CASSIDY ,  Joerg SIEGERT ,  Franz SCHRANK

IPC: H01L27/146 ,  H01L31/0296

CPC classification number: H01L27/1469 ,  H01L24/32 ,  H01L24/83 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14661 ,  H01L27/14663 ,  H01L27/14696 ,  H01L31/0296 ,  H01L31/02966 ,  H01L2924/14 ,  H01L2924/37001

Abstract: The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer.

公开(公告)号：US20170025351A1

公开(公告)日：2017-01-26

申请号：US15283183

申请日：2016-09-30

Applicant: ams AG

Inventor： Cathal CASSIDY ,  Martin SCHREMS ,  Franz SCHRANK

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/552 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10125 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/30101 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

Abstract: The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises an annular cavity (18) and a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for three-dimensional integration is offered by this scheme.

Abstract translation: 半导体器件包括具有金属化（111）的半导体衬底（10），其具有位于衬底的前侧（20）的上端子层（22）。 金属化从基板的后侧（21）形成从上端子层到后端子层（13）的通孔（23）。 贯通基板通孔包括环形空腔（18）和可填充有空气或其它气体的空隙（101）。 焊球（100）在不完全填充的情况下关闭空隙。 该方案提供了用于三维集成的各种互连。