发明申请
US20170018524A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD
审中-公开
半导体器件和半导体器件制造方法
- 专利标题： SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD
- 专利标题（中）： 半导体器件和半导体器件制造方法
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申请号： US15062035申请日： 2016-03-04
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公开(公告)号： US20170018524A1公开(公告)日： 2017-01-19
- 发明人: Norihiro NASHIDA , Hideyo NAKAMURA , Yoko NAKAMURA
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2015-141314 20150715
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L25/00 ; H01L25/065
摘要：
A semiconductor device includes a plurality of semiconductor units each including a laminated substrate formed by laminating an insulating board and a circuit board and a semiconductor element joined to the circuit board using a joining material which irreversibly makes a phase transition into a solid-phase state. In addition, the semiconductor device may include a base plate to which each of the plurality of semiconductor units is joined using solder and a connection unit which electrically connects the plurality of semiconductor units in parallel.
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