Invention Application
- Patent Title: TWO-PART PROGRAMMING METHODS
- Patent Title (中): 两部分编程方法
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Application No.: US15287956Application Date: 2016-10-07
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Publication No.: US20170025170A1Publication Date: 2017-01-26
- Inventor: Vishal Sarin , Allahyar Vahidimowlavi
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID BOISE
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID BOISE
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/34
Abstract:
A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programing the first memory cell to the first level. After programing the first memory cell to the first level, the second memory cell is programmed to the second level using a second set of program pulses within a second programming voltage range, where the first programming voltage range overlaps the second programming voltage range. The first memory cell that is programmed to the first level is inhibited while programing the second memory cell to the second level.
Public/Granted literature
- US09858991B2 Two-part programming methods Public/Granted day:2018-01-02
Information query
