Invention Application
US20170025270A1 METHOD TO FABRICATE A HIGH PERFORMANCE CAPACITOR IN A BACK END OF LINE (BEOL)
有权
在后端（BEOL）中制作高性能电容器的方法
- Patent Title: METHOD TO FABRICATE A HIGH PERFORMANCE CAPACITOR IN A BACK END OF LINE (BEOL)
- Patent Title (中): 在后端（BEOL）中制作高性能电容器的方法
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Application No.: US14807289Application Date: 2015-07-23
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Publication No.: US20170025270A1Publication Date: 2017-01-26
- Inventor: Sunil Kumar SINGH , Shesh Mani PANDEY
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/308 ; H01L27/08 ; H01L21/283 ; H01L49/02 ; H01L21/3065 ; H01L21/3105
Abstract:
A method can include applying a patterned mask over a semiconductor structure, the semiconductor structure having a dielectric layer, forming using the patterned mask a material formation trench intermediate first and second spaced apart metal formations formed in the dielectric layer, and disposing a dielectric material formation in the material formation trench.
Public/Granted literature
- US09711346B2 Method to fabricate a high performance capacitor in a back end of line (BEOL) Public/Granted day:2017-07-18
Information query
IPC分类:
