Invention Application
- Patent Title: METHODS OF FORMING UNDER DEVICE INTERCONNECT STRUCTURES
- Patent Title (中): 在设备互连结构下形成的方法
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Application No.: US15285454Application Date: 2016-10-04
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Publication No.: US20170025355A1Publication Date: 2017-01-26
- Inventor: Patrick Morrow , Don Nelson , M. Clair Webb , Kimin Jun , II-Seok Son
- Applicant: Intel Corporation
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L23/50 ; H01L23/528 ; H01L27/12 ; H01L21/74
Abstract:
Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.
Public/Granted literature
- US09721898B2 Methods of forming under device interconnect structures Public/Granted day:2017-08-01
Information query
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