公开(公告)号：US09490201B2

公开(公告)日：2016-11-08

申请号：US13798575

申请日：2013-03-13

Applicant: Intel Corporation

Inventor： Patrick Morrow ,  Don Nelson ,  M. Clair Webb ,  Kimin Jun ,  Il-Seok Son

IPC: H01L23/522 ,  H01L21/20 ,  H01L23/00 ,  H01L23/535 ,  H01L21/74 ,  H01L23/528

CPC classification number: H01L23/535 ,  H01L21/2007 ,  H01L21/743 ,  H01L23/50 ,  H01L23/522 ,  H01L23/5286 ,  H01L24/18 ,  H01L27/1207

Abstract: Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.

Abstract translation: 描述了在器件结构下形成微电子互连的方法。 这些方法和结构可以包括在第一衬底中形成器件层，在第二衬底中形成至少一个布线层，然后将第一衬底与第二衬底耦合，其中第一衬底与第二衬底结合。

公开(公告)号：US09721898B2

公开(公告)日：2017-08-01

申请号：US15285454

申请日：2016-10-04

Applicant: Intel Corporation

Inventor： Patrick Morrow ,  Don Nelson ,  M. Clair Webb ,  Kimin Jun ,  Il-Seok Son

IPC: H01L23/535 ,  H01L21/20 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/74 ,  H01L23/50 ,  H01L27/12

CPC classification number: H01L23/535 ,  H01L21/2007 ,  H01L21/743 ,  H01L23/50 ,  H01L23/522 ,  H01L23/5286 ,  H01L24/18 ,  H01L27/1207

Abstract: Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.

公开(公告)号：US20170025355A1

公开(公告)日：2017-01-26

申请号：US15285454

申请日：2016-10-04

Applicant: Intel Corporation

Inventor： Patrick Morrow ,  Don Nelson ,  M. Clair Webb ,  Kimin Jun ,  II-Seok Son

IPC: H01L23/535 ,  H01L23/50 ,  H01L23/528 ,  H01L27/12 ,  H01L21/74

CPC classification number: H01L23/535 ,  H01L21/2007 ,  H01L21/743 ,  H01L23/50 ,  H01L23/522 ,  H01L23/5286 ,  H01L24/18 ,  H01L27/1207

Abstract: Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate.

Abstract translation: 描述了在器件结构下形成微电子互连的方法。 这些方法和结构可以包括在第一衬底中形成器件层，在第二衬底中形成至少一个布线层，然后将第一衬底与第二衬底耦合，其中第一衬底与第二衬底结合。