Invention Application
US20170032969A1 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNELS AND METHOD OF MANUFACTURING THE SAME
审中-公开
具有垂直通道的半导体器件及其制造方法
- Patent Title: SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNELS AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 具有垂直通道的半导体器件及其制造方法
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Application No.: US15292884Application Date: 2016-10-13
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Publication No.: US20170032969A1Publication Date: 2017-02-02
- Inventor: Soo-ho SHIN , Yong-sung KIM , Tae-young CHUNG
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2005-0064067 20050715
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/762 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/06

Abstract:
A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.
Public/Granted literature
- US09966267B2 Semiconductor device having vertical channels and method of manufacturing the same Public/Granted day:2018-05-08
Information query
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