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    GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    石墨装置及其制造方法

    公开(公告)号：US20140061590A1

    公开(公告)日：2014-03-06

    申请号：US13856022

    申请日：2013-04-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joo-ho LEE ,  Tae-han JEON ,  Yong-sung KIM ,  Chang-seung LEE ,  Yong-seok JUNG

    IPC: H01L29/16 ,  H01L21/02

    CPC classification number: H01L29/1606 ,  B82Y40/00 ,  H01L21/02527 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78684 ,  Y10S977/734

    Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

    Abstract translation: 制造石墨烯装置的方法包括在基板上形成绝缘材料层，在彼此间隔开的绝缘材料层上形成第一和第二金属焊盘，形成石墨烯层，该石墨烯层被定义为第一和第 在所述绝缘材料层上的第二金属焊盘，在所述石墨烯层上形成第三和第四金属焊盘，所述第二金属焊盘与所述第一金属焊盘和所述第二金属焊盘分别在所述第一金属焊盘和所述第二金属焊盘之上分别延伸， 形成第一保护层以覆盖所有第一和第二金属焊盘，石墨烯层以及第三和第四金属焊盘，并且蚀刻第一保护层的整个表面，直到仅由用于形成第一和第二金属焊盘的材料形成的残留层 保护层保留在有效区域上。

    SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNELS AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNELS AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有垂直通道的半导体器件及其制造方法

    公开(公告)号：US20170032969A1

    公开(公告)日：2017-02-02

    申请号：US15292884

    申请日：2016-10-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Soo-ho SHIN ,  Yong-sung KIM ,  Tae-young CHUNG

    IPC: H01L21/28 ,  H01L21/762 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

    CPC classification number: H01L21/28123 ,  H01L21/76224 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

    Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

    Abstract translation: 一种制造半导体器件的方法，该半导体器件能够防止由有源区的长轴与元件隔离层相交的栅电极引起的泄漏电流，并且还具有垂直沟道以提供足够的重叠余量;以及使用上述制造的半导体器件 方法。 该器件包括形成在元件隔离层上的栅电极，它们设置在有源区之间并具有高于有源区顶表面的顶表面。 由于栅电极形成在元件隔离层上，所以防止了半导体衬底中的漏电流。 此外，使用条纹形掩模图案形成栅电极，从而与接触形状或条形图案相比获得足够的重叠余量。

    NANOGAP DEVICE AND METHOD OF PROCESSING SIGNAL FROM THE NANOGAP DEVICE
    6.
    发明申请
    NANOGAP DEVICE AND METHOD OF PROCESSING SIGNAL FROM THE NANOGAP DEVICE 有权
    NANOGAP装置和从NANOGAP装置处理信号的方法

    公开(公告)号：US20140125310A1

    公开(公告)日：2014-05-08

    申请号：US13856026

    申请日：2013-04-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-seung LEE ,  Yong-sung KIM ,  Jeo-young SHIM ,  Joo-ho LEE

    IPC: G01N27/414

    CPC classification number: B82Y15/00 ,  G01N15/1227 ,  G01N27/3271 ,  G01N33/48721 ,  Y10S977/734 ,  Y10S977/938

    Abstract: A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

    Abstract translation: 纳米测距装置包括其中形成有纳米孔的第一绝缘层，可以形成在第一绝缘层上的第一纳米隙电极，并且可以被分成两部分，其间插入两个部分之间的纳米隙，面对纳米孔的纳米孔， 形成在第一绝缘层上的第二绝缘层，形成在第二绝缘层上的第一石墨烯层，形成在第一石墨烯层上的第一半导体层，形成在第一半导体层上的第一漏电极和形成在第一绝缘层上的第一源电极， 第一石墨烯层，以便与第一半导体层分开。

    NANOGAP DEVICE AND METHOD OF PROCESSING SIGNAL FROM THE NANOGAP DEVICE
    8.
    发明申请
    NANOGAP DEVICE AND METHOD OF PROCESSING SIGNAL FROM THE NANOGAP DEVICE 有权
    NANOGAP装置和从NANOGAP装置处理信号的方法

    公开(公告)号：US20140125322A1

    公开(公告)日：2014-05-08

    申请号：US13855991

    申请日：2013-04-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-seung LEE ,  Yong-sung KIM ,  Jeo-young SHIM ,  Joo-ho LEE

    IPC: H01L29/78 ,  G01R19/00

    CPC classification number: B82Y15/00 ,  B82Y99/00 ,  G01N33/48721

    Abstract: A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.

    Abstract translation: 可以包括其中形成有纳米孔的第一绝缘层的纳米隙装置，可以在第一绝缘层上的第一沟道层，第一源电极和第一漏电极，第一源电极和第一漏电极可以分别与第一绝缘层的第一绝缘层 沟道层，可以覆盖第一沟道层的第二绝缘层，第一源电极和第一漏电极，以及可以在第二绝缘层上并且可以被纳米隙分成两部分的第一纳米隙电极， 其面对纳米孔，介于两部分之间。

    TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
    晶体管及其制造方法

    公开(公告)号：US20140021446A1

    公开(公告)日：2014-01-23

    申请号：US13792525

    申请日：2013-03-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-seung LEE ,  Yong-sung KIM ,  Joo-ho LEE ,  Yong-seok JUNG

    IPC: H01L29/16 ,  H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/1606 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

    Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

    Abstract translation: 晶体管和制造晶体管的方法包括石墨烯和从石墨烯转化的材料。 晶体管可以包括包括石墨烯的沟道层和包括从石墨烯转换的材料的栅极绝缘层。 从石墨烯转化的材料可以是氟化石墨烯。 沟道层可以包括图案化的石墨烯区域。 图案化的石墨烯区域可以由从石墨烯转换的区域限定。 晶体管的栅极可以包括石墨烯。

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