发明申请
US20170033221A1 HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS
有权
用于场效应晶体管的高DOPED III-V源/漏极连接
- 专利标题： HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS
- 专利标题（中）： 用于场效应晶体管的高DOPED III-V源/漏极连接
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申请号： US14812425申请日： 2015-07-29
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公开(公告)号： US20170033221A1公开(公告)日： 2017-02-02
- 发明人: Xiuyu Cai , Qing Liu , Kejia Wang , Ruilong Xie , Chun-Chen Yeh
- 申请人： International Business Machines Corporation , GlobalFoundries, Inc. , STMicroelectronics, Inc.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L21/306
摘要：
A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate including an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.
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