Invention Application
- Patent Title: METHOD FOR IMPROVED FIN PROFILE
- Patent Title (中): 改进的Fin配置文件的方法
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Application No.: US14812653Application Date: 2015-07-29
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Publication No.: US20170033224A1Publication Date: 2017-02-02
- Inventor: Nicholas Vincent LICAUSI , Zhenyu HU , Hong YU , Jinping LIU
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L29/06 ; H01L21/8234 ; H01L21/308 ; H01L21/3065
Abstract:
A method can include performing an etching process to define a fin trench having a first depth, the first depth being less that a target height of fin. A method can also include forming a layer to protect sidewalls defining the fin trench. A method can also include performing a second etching process to increase a depth of fin trench.
Public/Granted literature
- US09553194B1 Method for improved fin profile Public/Granted day:2017-01-24
Information query
IPC分类:
