发明申请
- 专利标题： HAFNIUM-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF HAFNIUM-CONTAINING FILMS
- 专利标题（中）： 含铪膜的成膜组合物用于含铪膜的蒸气沉积
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申请号： US15337765申请日： 2016-10-28
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公开(公告)号： US20170044664A1公开(公告)日： 2017-02-16
- 发明人: Christian DUSSARRAT , Jean-Marc GIRARD , Hana ISHII , Clément LANSALOT-MATRAS , Julien LIEFFRIG
- 申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; H01L21/02 ; H01L49/02 ; C07F7/30
摘要：
Disclosed are Hafnium-containing film forming compositions comprising Germanium- and Hafnium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing films on substrates via vapor deposition processes.
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