Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US15304015Application Date: 2014-04-14
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Publication No.: US20170047296A1Publication Date: 2017-02-16
- Inventor: Shinji WATANABE , Tsuyoshi KIDA , Yoshihiro ONO , Kentaro MORI , Kenji SAKATA , Yusuke YAMADA
- Applicant: Renesas Electronics Corporation
- International Application: PCT/JP2014/060603 WO 20140414
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31

Abstract:
In a semiconductor device according to an embodiment, a second semiconductor chip is mounted on a first rear surface of a first semiconductor chip. Also, the first rear surface of the first semiconductor chip includes a first region in which a plurality of first rear electrodes electrically connected to the second semiconductor chip via a protrusion electrode are formed and a second region which is located on a peripheral side relative to the first region and in which a first metal pattern is formed. In addition, a protrusion height of the first metal pattern with respect to the first rear surface is smaller than a protrusion height of each of the plurality of first rear electrodes with respect to the first rear surface.
Public/Granted literature
- US10141273B2 Semiconductor device and manufacturing method thereof Public/Granted day:2018-11-27
Information query
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