Invention Application
- Patent Title: SILICON GERMANIUM FIN CHANNEL FORMATION
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Application No.: US15340624Application Date: 2016-11-01
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Publication No.: US20170047406A1Publication Date: 2017-02-16
- Inventor: Hong He , Nicolas Loubet , Junli Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , STMicroelectronics, Inc.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/161 ; H01L21/225 ; H01L21/311 ; H01L29/66 ; H01L21/02
Abstract:
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including Ge over the region of the underlying fin. The amorphous layer is oxidized to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin.
Public/Granted literature
- US09882006B2 Silicon germanium fin channel formation Public/Granted day:2018-01-30
Information query
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