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Invention Application
US20170047507A1 SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES INCLUDING MAGNETIC SHIELDING LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES 审中-公开
包括磁性屏蔽层的半导体器件和半导体封装以及制造半导体器件和半导体封装的方法

  • Patent Title: SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES INCLUDING MAGNETIC SHIELDING LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES
  • Patent Title (中): 包括磁性屏蔽层的半导体器件和半导体封装以及制造半导体器件和半导体封装的方法
  • Application No.: US15093006
    Application Date: 2016-04-07
  • Publication No.: US20170047507A1
    Publication Date: 2017-02-16
  • Inventor: Bo-young SEO , Yong-kyu LEE
  • Applicant: Bo-young SEO , Yong-kyu LEE
  • Priority: KR10-2015-0114546 20150813
  • Main IPC: H01L43/02
  • IPC: H01L43/02 ;  H01L43/12 ;  H01L43/08
SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES INCLUDING MAGNETIC SHIELDING LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES
Abstract:
A magnetic random-access memory (MRAM) device and a semiconductor package include a magnetic shielding layer that may suppress at least one of magnetic orientation errors and deterioration of magnetic tunnel junction (MTJ) structures due to external magnetic fields. A semiconductor device includes: a MRAM chip including a MRAM; and a magnetic shielding layer including an upper shielding layer and a via shielding layer. The upper shielding layer is on a top surface of the MRAM chip, and the via shielding layer extends from the upper shielding layer and passes through the MRAM chip.
Abstract(Chinese):

磁性随机存取存储器（MRAM）器件和半导体封装包括磁屏蔽层，其可以抑制由于外部磁场而引起的磁性取向误差和磁性隧道结（MTJ）结构的劣化中的至少一种。 半导体器件包括：包括MRAM的MRAM芯片; 以及包括上屏蔽层和通孔屏蔽层的磁屏蔽层。 上屏蔽层位于MRAM芯片的顶表面上，并且通孔屏蔽层从上屏蔽层延伸并通过MRAM芯片。

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