发明申请
US20170053805A1 OVERHANG HARDMASK TO PREVENT PARASITIC EPITAXIAL NODULES AT GATE END DURING SOURCE DRAIN EPITAXY
有权
OVERHANG HARDMASK，以防止源头下降期间门顶端的PARASITIC EPITAXIAL NODULES
- 专利标题： OVERHANG HARDMASK TO PREVENT PARASITIC EPITAXIAL NODULES AT GATE END DURING SOURCE DRAIN EPITAXY
- 专利标题（中）： OVERHANG HARDMASK，以防止源头下降期间门顶端的PARASITIC EPITAXIAL NODULES
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申请号： US15267357申请日： 2016-09-16
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公开(公告)号： US20170053805A1公开(公告)日： 2017-02-23
- 发明人: Kangguo Cheng , Pouya Hashemi , Shogo Mochizuki , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/66
摘要：
A method of making a semiconductor device includes forming a gate covered by a hard mask over a substrate; disposing a mask over the gate and the hard mask; patterning the mask to expose a portion of the gate and the hard mask; cutting the gate and hard mask to form two shorter gates, each of the two shorter gates having an exposed end portion; undercutting the exposed end portion of at least one of the two shorter gates to form an overhanging hard mask portion over the exposed end portion; and forming spacers along a gate sidewall and beneath the overhanging hard mask portion.
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