Invention Application
US20170054006A1 P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET 审中-公开
P-TUNNELING场效应晶体管器件与POCKET

P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET
Abstract:
Described is a tunneling field effect transistor (TFET), comprising: a drain region having a first conductivity type; a source region having a second conductivity type opposite of the first conductivity type; a gate region to cause formation of a channel region between the source and drain regions; and a pocket disposed near a junction of the source region, wherein the pocket region formed from a material having lower percentage of one type of atom than percentage of the one type of atom in the source, channel, and drain regions.
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