Invention Application
US20170054006A1 P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET
审中-公开
P-TUNNELING场效应晶体管器件与POCKET
- Patent Title: P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET
- Patent Title (中): P-TUNNELING场效应晶体管器件与POCKET
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Application No.: US15118843Application Date: 2014-03-27
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Publication No.: US20170054006A1Publication Date: 2017-02-23
- Inventor: Uygar E. AVCI , Roza KOTLYAR , Ian A. YOUNG
- Applicant: Intel Corporation
- International Application: PCT/US2014/032059 WO 20140327
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L23/66 ; G06F3/041 ; H01L29/786
Abstract:
Described is a tunneling field effect transistor (TFET), comprising: a drain region having a first conductivity type; a source region having a second conductivity type opposite of the first conductivity type; a gate region to cause formation of a channel region between the source and drain regions; and a pocket disposed near a junction of the source region, wherein the pocket region formed from a material having lower percentage of one type of atom than percentage of the one type of atom in the source, channel, and drain regions.
Public/Granted literature
- US10128356B2 P-tunneling field effect transistor device with pocket Public/Granted day:2018-11-13
Information query
IPC分类:
