Invention Application
US20170069466A1 PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING
审中-公开
循环过程室和选择性材料的去除和蚀刻
- Patent Title: PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING
- Patent Title (中): 循环过程室和选择性材料的去除和蚀刻
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Application No.: US14994425Application Date: 2016-01-13
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Publication No.: US20170069466A1Publication Date: 2017-03-09
- Inventor: Toan Q. TRAN , Soonam PARK , Junghoon KIM , Dmitry LUBOMIRSKY
- Applicant: Applied Materials, Inc.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/311 ; H01L21/67
Abstract:
A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
Public/Granted literature
- US11004661B2 Process chamber for cyclic and selective material removal and etching Public/Granted day:2021-05-11
Information query
