发明申请
- 专利标题: SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US15160335申请日: 2016-05-20
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公开(公告)号: US20170069636A1公开(公告)日: 2017-03-09
- 发明人: Se-Jun PARK , Jang-Gn Yun , Sung-Min Hwang , Ahn-Sik Moon , Zhiliang Xia
- 申请人: Se-Jun PARK , Jang-Gn Yun , Sung-Min Hwang , Ahn-Sik Moon , Zhiliang Xia
- 优先权: KR10-2015-0127841 20150909
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L23/528 ; H01L21/768 ; H01L23/522
摘要:
A semiconductor device includes a plurality of insulation patterns and a plurality of gates alternately and repeatedly stacked on a substrate, a channel pattern extending through the gates in a first direction substantially perpendicular to a top surface of the substrate, a semiconductor pattern between the channel pattern and the substrate, and a conductive pattern between the channel pattern and the semiconductor pattern. The conductive pattern electrically connects the channel pattern to the semiconductor pattern. The conductive pattern contacts a bottom edge of the channel pattern and an upper surface of the semiconductor pattern.