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144 条记录 (耗时 0.031 秒)

    Three-dimensional semiconductor device
    2.
    发明授权
    Three-dimensional semiconductor device 有权

    公开(公告)号：US09812464B1

    公开(公告)日：2017-11-07

    申请号：US15437426

    申请日：2017-02-20

    申请人： Sung-Min Hwang

    发明人： Sung-Min Hwang

    IPC分类号： H01L23/52 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L27/11575

    摘要： A three-dimensional semiconductor device may include a lower electrode structure having a plurality of lower electrodes vertically stacked on a substrate and an upper electrode structure having a plurality of upper electrodes stacked on the lower electrode structure. Each of the lower and upper electrodes may include an electrode portion that is parallel to a top surface of the substrate and a vertical pad portion that is inclined with respect to the top surface of the substrate. The vertical pad portions of adjacent lower electrodes may be spaced apart from each other by a first horizontal distance. The vertical pad portions of adjacent lower and upper electrodes may be spaced apart from each other by a second horizontal distance that is greater than the first horizontal distance.

    Light emitting device
    5.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US09142718B2

    公开(公告)日：2015-09-22

    申请号：US12634526

    申请日：2009-12-09

    申请人： Sung Min Hwang

    发明人： Sung Min Hwang

    IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

    CPC分类号： H01L33/145 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405

    摘要： A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer disposed under the active layer and a second conductive semiconductor layer disposed under the active layer; a trench formed in a portion of the light emitting structure; a current barrier layer in the trench and configured to hinder current supply to the active layer at a portion where the trench is located and to block the active layer over the trench from emitting light; and a first electrode on the first conductive semiconductor layer above the portion where the trench is located.

    摘要翻译： 一种发光器件，包括具有第一导电半导体层，设置在有源层下方的有源层和设置在有源层下方的第二导电半导体层的发光结构; 形成在所述发光结构的一部分中的沟槽; 沟槽中的电流阻挡层，并且被配置成妨碍在沟槽所在部分处的有源层的电流供应，并阻挡沟槽上的有源层发射光; 以及在所述沟槽所在部分上方的所述第一导电半导体层上的第一电极。

    VERTICAL TYPE SEMICONDUCTOR DEVICES
    7.
    发明申请
    VERTICAL TYPE SEMICONDUCTOR DEVICES 有权
    垂直型半导体器件

    公开(公告)号：US20140197481A1

    公开(公告)日：2014-07-17

    申请号：US14156607

    申请日：2014-01-16

    申请人： Sung-Min HWANG ,  Han-Soo KIM ,  Woon-Kyung LEE ,  Won-Seok CHO

    发明人： Sung-Min HWANG ,  Han-Soo KIM ,  Woon-Kyung LEE ,  Won-Seok CHO

    IPC分类号： H01L29/78

    CPC分类号： H01L29/66833 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/7926

    摘要： A vertical type semiconductor device includes first and second word line structures that include first and second word lines. The word lines surround a plurality of pillar structures, which are provided to connect the word lines to corresponding string select lines. Connecting patterns electrically connect pairs of adjacent first and second word lines in a same plane. The device may be a nonvolatile memory device or a different type of device.

    摘要翻译： 垂直型半导体器件包括包括第一和第二字线的第一和第二字线结构。 字线围绕多个柱结构，其被提供以将字线连接到相应的字符串选择线。 连接图案将相邻的第一和第二字线的对电连接在同一平面中。 该设备可以是非易失性存储设备或不同类型的设备。

    Light emitting device
    8.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08772806B2

    公开(公告)日：2014-07-08

    申请号：US13039464

    申请日：2011-03-03

    申请人： Sung Min Hwang ,  Kyoung Woo Jo

    发明人： Sung Min Hwang ,  Kyoung Woo Jo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/405 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/13

    摘要： A light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and a first insulating layer between the first electrode and the light emitting structure.

    摘要翻译： 本实施例的发光器件包括：发光结构，包括第一半导体层，有源层和第二半导体层; 通过所述第一半导体层和所述有源层的第一空腔以暴露所述第二半导体层; 从所述第一空腔中的所述第二半导体层延伸到所述第一空腔的外部的第一电极; 第二电极，设置在所述第一半导体层的底表面的外周区域上，并且与所述第一电极间隔开，同时围绕所述第一电极的侧面; 以及在第一电极和发光结构之间的第一绝缘层。

    Stack and folding-typed electrode assembly and method for preparation of the same
    9.
    发明授权
    Stack and folding-typed electrode assembly and method for preparation of the same 有权
    堆叠折叠型电极组件及其制备方法

    公开(公告)号：US08709642B2

    公开(公告)日：2014-04-29

    申请号：US12667484

    申请日：2008-07-02

    申请人： Kyong Won Kang ,  Hyang Mok Lee ,  Byungjin Choi ,  Eunyoung Goh ,  Sung-Min Hwang ,  Oh Young Hyun ,  Chang bum Ahn ,  Hyun-Chul Jung ,  Wooyong Lee

    发明人： Kyong Won Kang ,  Hyang Mok Lee ,  Byungjin Choi ,  Eunyoung Goh ,  Sung-Min Hwang ,  Oh Young Hyun ,  Chang bum Ahn ,  Hyun-Chul Jung ,  Wooyong Lee

    IPC分类号： H01M10/04

    CPC分类号： H01M10/0436 ,  H01M6/46 ,  H01M10/0459 ,  H01M10/052 ,  H01M10/0583 ,  Y10T29/49108 ,  Y10T29/49112

    摘要： Disclosed herein is a method of locating a plurality of full cells constructed in a cathode/separator/anode structure, as basic units, on a separator sheet having a continuous length, further locating a unit electrode or a bi-cell on the separator sheet, and winding the full cells and unit electrode or the bi-cell to continuously manufacture a stacking/folding type electrode assembly constructed in a structure in which anodes are located at the outermost electrodes forming the outside of the electrode assembly, respectively, wherein the method including a step of continuously supplying a cathode sheet, an anode sheet, a first separator sheet, and a second separator sheet, to manufacture the unit cells, successively arranging the unit cells on the second separator sheet from a first stage to an nth stage, and winding the unit cells, a step of arranging cathode tabs and anode tabs at the respective stages, while the cathode tabs and the anode tabs are opposite to each other, and arranging electrode tabs having the same polarity between the neighboring stages, while the electrode tabs are opposite to each other, such that the electrode tabs having the same polarity are located all together at predetermined positions of the wound electrode assembly, and a step of supplying electrodes the number of which is odd from two electrode sheets and electrodes the number of which is even from one electrode sheet.

    摘要翻译： 本文公开了一种在具有连续长度的隔离片上定位作为基本单元的阴极/隔板/阳极结构中构成的多个全电池的方法，将单元电极或双电池进一步放置在隔板上， 并卷绕全部单元和单位电极或双电池以连续地制造堆叠/折叠型电极组件，其分别以阳极位于形成电极组件外侧的最外电极的结构中构成，其中包括 连续地供给阴极片，阳极片，第一隔板片和第二隔片片的步骤，以制造单元电池，从第一阶段到第n阶段将单元电池依次布置在第二隔板片上，以及 卷绕单元电池，在阴极片和阳极片彼此相对的同时在相应的阶段排列阴极片和阳极片的步骤， g电极片在相邻台阶之间具有相同的极性，同时电极片彼此相对，使得具有相同极性的电极片全部位于卷绕电极组件的预定位置处，并且提供电极 其数量从两个电极片和电极的数量是奇数的，电极的数量甚至是一个电极片。