Invention Application
US20170069685A1 Magnetic Tunnel Junction and 3-D Magnetic Tunnel Junction Array 审中-公开
磁隧道结和三维磁隧道结阵列

  • Patent Title: Magnetic Tunnel Junction and 3-D Magnetic Tunnel Junction Array
  • Patent Title (中): 磁隧道结和三维磁隧道结阵列
  • Application No.: US15219392
    Application Date: 2016-07-26
  • Publication No.: US20170069685A1
    Publication Date: 2017-03-09
  • Inventor: Yeu-Chung Lin
  • Applicant: Yeu-Chung Lin
  • Main IPC: H01L27/22
  • IPC: H01L27/22 H01L43/02 H01L43/12 H01L43/08
Magnetic Tunnel Junction and 3-D Magnetic Tunnel Junction Array
Abstract:
A magnetic tunnel junction cell includes a first electrode having an axis extending in a direction substantially perpendicular to an active surface of a substrate. The magnetic tunnel junction further includes a fixed layer, a U-shaped free layer, a tunnel layer sandwiched between the fixed layer and the U-shaped free layer and a second electrode embedded in the U-shaped free layer. The fixed layer, the tunnel layer and the U-shaped free layer are disposed between the first electrode and the second electrode and constitute a magnetic tunnel junction. The tunnel layer may also be U-shaped.
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