Invention Application
- Patent Title: Magnetic Tunnel Junction and 3-D Magnetic Tunnel Junction Array
- Patent Title (中): 磁隧道结和三维磁隧道结阵列
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Application No.: US15219392Application Date: 2016-07-26
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Publication No.: US20170069685A1Publication Date: 2017-03-09
- Inventor: Yeu-Chung Lin
- Applicant: Yeu-Chung Lin
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/12 ; H01L43/08

Abstract:
A magnetic tunnel junction cell includes a first electrode having an axis extending in a direction substantially perpendicular to an active surface of a substrate. The magnetic tunnel junction further includes a fixed layer, a U-shaped free layer, a tunnel layer sandwiched between the fixed layer and the U-shaped free layer and a second electrode embedded in the U-shaped free layer. The fixed layer, the tunnel layer and the U-shaped free layer are disposed between the first electrode and the second electrode and constitute a magnetic tunnel junction. The tunnel layer may also be U-shaped.
Public/Granted literature
- US09721990B2 Magnetic tunnel junction and 3-D magnetic tunnel junction array Public/Granted day:2017-08-01
Information query
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