Invention Application
- Patent Title: VERTICAL POWER MOSFET
- Patent Title (中): 垂直功率MOSFET
-
Application No.: US15355583Application Date: 2016-11-18
-
Publication No.: US20170069751A1Publication Date: 2017-03-09
- Inventor: Tomohiro TAMAKI
- Applicant: Renesas Electronics Corporation
- Priority: JP2012-234524 20121024
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/66 ; H01L29/417 ; H01L21/04 ; H01L29/16 ; H01L29/06 ; H01L29/10
Abstract:
Vertical power MOSFETs having a super junction are devices capable of having a lower on resistance than other vertical power MOSFETs. Although they have the advantage of high-speed switching due to rapid depletion of an N type drift region at the time of turn off in switching operation, they are likely to cause ringing. A vertical power MOSFET having a super junction structure provided by the present invention has, in the surface region of a first conductivity type drift region under a gate electrode, an undergate heavily doped N type region having a depth shallower than that of a second conductivity type body region and having a concentration higher than that of the first conductivity type drift region.
Information query
IPC分类:
