- 专利标题： UNIFORM HEIGHT TALL FINS WITH VARYING SILICON GERMANIUM CONCENTRATIONS
-
申请号： US14856930申请日： 2015-09-17
-
公开(公告)号： US20170084454A1公开(公告)日： 2017-03-23
- 发明人: Stephen W. Bedell , Bruce B. Doris , Keith E. Fogel , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L29/161 ; H01L29/06
摘要：
A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first semiconducting material layer comprising an element in a first concentration; and forming a second fin in a second semiconducting material layer disposed over the substrate and adjacent to the first semiconducting material layer, the second semiconducting material layer comprising the element in a second concentration; wherein the first concentration is different than the second concentration.