Fully Depleted Silicon On Insulator Flash Memory Design

Invention Application

US20170098474A1 Fully Depleted Silicon On Insulator Flash Memory Design 有权

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Patent Title: Fully Depleted Silicon On Insulator Flash Memory Design
Application No.: US14875533

Application Date: 2015-10-05
Publication No.: US20170098474A1

Publication Date: 2017-04-06
Inventor: Hieu Van Tran , Anh Ly , Thuan Vu , Hung Quoc Nguyen
Applicant: Silicon Storage Technology, Inc.
Main IPC: G11C16/14
IPC: G11C16/14 ; G11C16/26 ; G11C16/08

Fully Depleted Silicon On Insulator Flash Memory Design

Abstract:

The present invention relates to a flash memory system wherein one or more circuit blocks utilize fully depleted silicon-on-insulator transistor design to minimize leakage

Public/Granted literature

US09972395B2 Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems Public/Granted day:2018-05-15

Information query

Global Dossier Espacenet

IPC分类:

G	物理
G11	信息存储
G11C	静态存储器（半导体存储器件入H01L，如H01L27/108-H01L27/11597）
G11C16/00	可擦除可编程序只读存储器（G11C14/00优先）
G11C16/02	.电可编程序的
G11C16/06	..辅助电路，例如：用于写入存储器的
G11C16/10	...编程或数据输入电路
G11C16/14	....用于电擦除的电路，例如擦除电压开关电路