Invention Application
- Patent Title: THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING THIN SAME
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Application No.: US15131165Application Date: 2016-04-18
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Publication No.: US20170098792A1Publication Date: 2017-04-06
- Inventor: Joo Young Kim , Jiyoung JUNG , Jeong II PARK , Woo Young YANG , Youngjun YUN , Eun Kyung LEE , Ajeong CHOI
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0140544 20151006
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00
Abstract:
A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.
Public/Granted literature
- US09923159B2 Thin film transistor, method of manufacturing same, and electronic device including thin same Public/Granted day:2018-03-20
Information query
IPC分类:
