公开(公告)号：US20170098792A1

公开(公告)日：2017-04-06

申请号：US15131165

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Jiyoung JUNG ,  Jeong II PARK ,  Woo Young YANG ,  Youngjun YUN ,  Eun Kyung LEE ,  Ajeong CHOI

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0533 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0011 ,  H01L51/0074

Abstract: A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.

公开(公告)号：US20160197122A1

公开(公告)日：2016-07-07

申请号：US14794532

申请日：2015-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Satoh RYUICHI ,  Kyu Sik KIM ,  Woo Young YANG ,  Yeon-Hee KIM ,  Yong-Young PARK ,  Xianyu WENXU ,  Chang Seung LEE ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/107 ,  H01L2251/303

Abstract: Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.

Abstract translation: 包括有机光电子器件的有机光电子器件和图像传感器包括在光入射侧的第一透光电极，与第一透光电极相对的第二透光电极，在第一和第二光之间的有源层 - 透射电极和在第一透光电极上的紫外（UV）光线阻挡层，其中紫外线（UV）光线阻挡层包括至少一种具有小于或等于约75％的透光率的金属氧化物，用于 小于或等于约380nm的光。