- 专利标题: SUBSTRATE STRUCTURE
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申请号: US15210563申请日: 2016-07-14
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公开(公告)号: US20170104048A1公开(公告)日: 2017-04-13
- 发明人: Yung-Bin CHUNG , Bo-Geon JEON , Eun-Jeong CHO , Hye-Hyang PARK , Sung-Hoon YANG , Woo-Seok JEON , Joo-Hee JEON , Chaun-Gi CHOI
- 申请人: Samsung Display Co., Ltd.
- 优先权: KR10-2015-0143067 20151013
- 主分类号: H01L27/32
- IPC分类号: H01L27/32
摘要:
A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
公开/授权文献
- US10020352B2 Substrate structure 公开/授权日:2018-07-10
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