公开(公告)号：US20170104048A1

公开(公告)日：2017-04-13

申请号：US15210563

申请日：2016-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin CHUNG ,  Bo-Geon JEON ,  Eun-Jeong CHO ,  Hye-Hyang PARK ,  Sung-Hoon YANG ,  Woo-Seok JEON ,  Joo-Hee JEON ,  Chaun-Gi CHOI

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L51/5253

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

公开(公告)号：US20210296418A1

公开(公告)日：2021-09-23

申请号：US17338577

申请日：2021-06-03

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang PARK ,  Joo-Hee JEON ,  Seung-Ho JUNG ,  Chaun-Gi CHOI ,  Hyeon-Sik KIM ,  Hui-Won YANG ,  Eun-Young LEE

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US20160254334A1

公开(公告)日：2016-09-01

申请号：US14817900

申请日：2015-08-04

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk YANG ,  Tae-Young KIM ,  Hye-Hyang PARK

IPC: H01L27/32 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/423 ,  H01L21/477 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/3262 ,  H01L21/47576 ,  H01L21/477 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

Abstract translation: 氧化物半导体器件包括第一绝缘层图案和设置在基板上的第二绝缘层图案，设置在第一绝缘层图案和第二绝缘层图案上的有源层，有源层包括包含第一绝缘层图案的源极区域，漏极 包括第二绝缘层图案的区域和设置在源极和漏极区域之间的沟道区域，与源极区域接触的源极电极和与漏极区域接触的漏极电极。

公开(公告)号：US20170221976A1

公开(公告)日：2017-08-03

申请号：US15416653

申请日：2017-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang PARK ,  Joo-Hee JEON ,  Seung-Ho JUNG ,  Chaun-Gi CHOI ,  Hyeon-Sik KIM ,  Hui-Won YANG ,  Eun-Young LEE

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3211 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/326 ,  H01L29/513 ,  H01L29/78645 ,  H01L29/78666 ,  H01L29/78675 ,  H01L51/0096 ,  H01L51/0097 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5275 ,  H01L2251/301

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US20170084635A1

公开(公告)日：2017-03-23

申请号：US15190919

申请日：2016-06-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho JUNG ,  Chaun-Gi CHOI ,  Hyeon-Sik KIM ,  Hye-Young PARK ,  Hye-Hyang PARK ,  Hui-Won YANG ,  Eun-Young LEE ,  Joo-Hee JEON ,  Su-Kyoung YANG ,  Chan-Woo YANG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/78675 ,  H01L2227/323

Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

公开(公告)号：US20190386084A1

公开(公告)日：2019-12-19

申请号：US16556166

申请日：2019-08-29

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang PARK ,  Joo-Hee JEON ,  Seung-Ho JUNG ,  Chaun-Gi CHOI ,  Hyeon-Sik KIM ,  Hui-Won YANG ,  Eun-Young LEE

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US20150263313A1

公开(公告)日：2015-09-17

申请号：US14726991

申请日：2015-06-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Mu-Gyeom KIM ,  Hye-Hyang PARK ,  Hyun-Sun PARK

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5265 ,  H01L27/3206 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/52

Abstract: An organic light emitting display apparatus includes a substrate, a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor, a passivation layer covering the light conversion layer, a first electrode on the passivation layer, an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

Abstract translation: 一种有机发光显示装置，包括基板，基板上的光转换层，包含氧化物半导体的光转换层，覆盖光转换层的钝化层，钝化层上的第一电极，第一 电极，中间层包括有机发射层，第二电极在中间层上。