Invention Application
- Patent Title: III-V NITRIDE SEMICONDUCTOR DEVICE
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Application No.: US14951512Application Date: 2015-11-25
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Publication No.: US20170104074A1Publication Date: 2017-04-13
- Inventor: Wei-Hung Kuo , Suh-Fang Lin , Kun-Fong Lin , Chia-Lung Tsai
- Applicant: Industrial Technology Research Institute
- Priority: TW104133000 20151007
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/34 ; H01L29/45
Abstract:
In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.
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