公开(公告)号：US20170104074A1

公开(公告)日：2017-04-13

申请号：US14951512

申请日：2015-11-25

Applicant: Industrial Technology Research Institute

Inventor： Wei-Hung Kuo ,  Suh-Fang Lin ,  Kun-Fong Lin ,  Chia-Lung Tsai

IPC: H01L29/20 ,  H01L29/34 ,  H01L29/45

CPC classification number: H01L29/2003 ,  H01L29/34 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/778 ,  H01L31/0224 ,  H01L31/02363 ,  H01L31/1035 ,  H01L31/1856 ,  H01L33/16 ,  H01L33/30 ,  H01L33/382 ,  Y02E10/544

Abstract: In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.