Invention Application
- Patent Title: IMPLEMENTING ATOMIC LAYER DEPOSITION FOR GATE DIELECTRICS
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Application No.: US15286503Application Date: 2016-10-05
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Publication No.: US20170110313A1Publication Date: 2017-04-20
- Inventor: Fu Tang , Xiaoqiang Jiang , Qi Xie , Michael Eugene Givens , Jan Willem Maes , Jerry Chen
- Applicant: ASM IP Holding B.V.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/20 ; H01L29/51 ; C23C16/455 ; H01L29/16
Abstract:
A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.
Information query
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