Invention Application
- Patent Title: GATE STRUCTURE, SEMICONDUCTOR DEVICE AND THE METHOD OF FORMING SEMICONDUCTOR DEVICE
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Application No.: US15062062Application Date: 2016-03-05
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Publication No.: US20170110550A1Publication Date: 2017-04-20
- Inventor: Chun-Hsiung TSAI , Kuo-Feng YU , Chien-Tai CHAN , Ziwei FANG , Kei-Wei CHEN , Huai-Tei YANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/40 ; H01L29/51 ; H01L29/78 ; H01L29/66
Abstract:
A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.
Public/Granted literature
- US10141417B2 Gate structure, semiconductor device and the method of forming semiconductor device Public/Granted day:2018-11-27
Information query
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