- 专利标题： HYBRID SOURCE AND DRAIN CONTACT FORMATION USING METAL LINER AND METAL INSULATOR SEMICONDUCTOR CONTACTS
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申请号： US15272919申请日： 2016-09-22
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公开(公告)号： US20170125535A1公开(公告)日： 2017-05-04
- 发明人: Hiroaki Niimi , Shariq Siddiqui , Tenko Yamashita
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/161 ; H01L29/417 ; H01L27/092 ; H01L21/02 ; H01L21/3213 ; H01L21/285 ; H01L29/08 ; H01L21/768
摘要：
An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.
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