- 专利标题: GATE-ALL-AROUND FIN DEVICE
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申请号: US15402504申请日: 2017-01-10
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公开(公告)号: US20170125598A1公开(公告)日: 2017-05-04
- 发明人: John B. CAMPI, JR. , Robert J. GAUTHIER, JR. , Rahul MISHRA , Souvick MITRA , Mujahid MUHAMMAD
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L29/06
摘要:
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
公开/授权文献
- US09978874B2 Gate-all-around fin device 公开/授权日:2018-05-22