公开(公告)号：US20170162569A1

公开(公告)日：2017-06-08

申请号：US15441353

申请日：2017-02-24

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L27/088 ,  H01L21/265 ,  H01L21/266 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/10

CPC分类号： H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20200027987A1

公开(公告)日：2020-01-23

申请号：US16585651

申请日：2019-09-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/266 ,  H01L21/265 ,  H01G4/33 ,  H01G4/30 ,  H01G4/228 ,  H01G4/14 ,  H01G4/005 ,  B32B27/36 ,  B32B27/34 ,  B32B27/32 ,  B32B27/30 ,  B32B27/28 ,  B32B27/08 ,  B32B27/00 ,  B32B7/02 ,  B32B3/08 ,  B29C37/00 ,  H01L29/66 ,  H01L29/06 ,  B29C48/49 ,  B29C48/21 ,  H01G4/20

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20190319129A1

公开(公告)日：2019-10-17

申请号：US16452072

申请日：2019-06-25

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/78 ,  B29C48/49 ,  B29C48/21 ,  H01L29/66 ,  H01L27/088 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01G4/33 ,  H01G4/30 ,  H01G4/14 ,  H01G4/005 ,  B32B27/36 ,  B32B27/34 ,  B32B27/32 ,  B32B27/30 ,  B32B27/28 ,  B32B27/08 ,  B32B27/00 ,  B32B7/02 ,  B32B3/08 ,  H01L29/06 ,  H01G4/228 ,  B29C37/00

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20180331226A1

公开(公告)日：2018-11-15

申请号：US16033288

申请日：2018-07-12

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/266 ,  H01L21/265 ,  H01G4/33 ,  H01G4/30 ,  H01G4/228 ,  H01G4/14 ,  H01G4/005 ,  B32B27/36 ,  B32B27/34 ,  B32B27/32 ,  B32B27/30 ,  B32B27/28 ,  B32B27/08 ,  B32B27/00 ,  B32B7/02 ,  B32B3/08 ,  B29C47/56 ,  B29C47/06 ,  B29C37/00 ,  B29K23/00 ,  B29L31/34 ,  B29L9/00 ,  B29K507/04 ,  B29K105/16

CPC分类号： H01L27/0886 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L29/7856 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20170207341A1

公开(公告)日：2017-07-20

申请号：US15474096

申请日：2017-03-30

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, Jr. ,  Robert J. GAUTHIER, Jr. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/06 ,  H01L29/08

CPC分类号： H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20170125598A1

公开(公告)日：2017-05-04

申请号：US15402504

申请日：2017-01-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20160284852A1

公开(公告)日：2016-09-29

申请号：US15171288

申请日：2016-06-02

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06

CPC分类号： H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20160141365A1

公开(公告)日：2016-05-19

申请号：US14882809

申请日：2015-10-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L29/08 ,  H01L29/78

CPC分类号： H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

摘要翻译： 公开了一种围绕翅片双扩散金属氧化物半导体（DMOS）的器件和制造方法。 该方法包括从衬底形成多个翅片结构。 该方法还包括在衬底内形成第一导电类型和第二导电类型的阱以及多个翅片结构中相应的翅片结构。 该方法还包括在第一鳍片结构的暴露部分上形成源极接触。 该方法还包括在相邻鳍片结构的暴露部分上形成到第一鳍片结构的漏极接触。 该方法还包括在介电填充材料周围形成围绕第一鳍结构并在第一导电类型的阱上延伸的栅极结构。

公开(公告)号：US20150187753A1

公开(公告)日：2015-07-02

申请号：US14146421

申请日：2014-01-02

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC分类号： H01L27/02 ,  H01L21/8249 ,  H01L21/8234 ,  H01L23/367 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/0262 ,  H01L23/3677 ,  H01L27/0255 ,  H01L29/66545 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

摘要： Fin contacted electrostatic discharge (ESD) devices with improved heat distribution and methods of manufacture are disclosed. The method includes forming a plurality of fins on a substrate which is aligned with at least one well region in the substrate. The method further includes forming at least one electrostatic discharge (ESD) device spanning two or more of the plurality of fins. The forming of the ESD device includes forming an epitaxial material spanning the two or more of the plurality of fins and forming one or more contacts on the epitaxial material.

摘要翻译： 公开了具有改进的热分布的翅片接触静电放电（ESD）装置和制造方法。 该方法包括在与衬底中的至少一个阱区对准的衬底上形成多个翅片。 该方法还包括形成跨越多个翅片中的两个或更多个的至少一个静电放电（ESD）装置。 ESD器件的形成包括形成跨越多个鳍中的两个或更多个的外延材料，并在外延材料上形成一个或多个触点。

公开(公告)号：US20140061803A1

公开(公告)日：2014-03-06

申请号：US14073119

申请日：2013-11-06

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Shunhua CHANG ,  Kiran V. CHATTY ,  Robert J. GAUTHIER, JR. ,  Mujahid MUHAMMAD

IPC分类号： H01L27/02

CPC分类号： H01L27/0259 ,  H01L27/0277 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a PMOSFET within a triple well. The lateral bipolar preferably includes diodes at the I/O and/or the VDDs of the circuitry.

摘要翻译： 通过将三极管内的pFET与NMOSFET或n-p-n之间的PMOS双极集成在一起来制造集成电路芯片中的静电放电（EDS）电路的结构和方法。 横向双极性优选地包括在电路的I / O和/或VDD处的二极管。