- 专利标题： SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY
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申请号： US15414144申请日： 2017-01-24
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公开(公告)号： US20170133433A1公开(公告)日： 2017-05-11
- 发明人: Jong Won Lee , Gianpaolo Spadini , Derchang Kau
- 申请人： MICRON TECHNOLOGY, INC.
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
公开/授权文献
- US10692930B2 Self-aligned cross-point phase change memory-switch array 公开/授权日：2020-06-23
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