- 专利标题: ETCH VARIATION TOLERANT OPTIMIZATION
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申请号: US15318940申请日: 2016-12-14
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公开(公告)号: US20170139320A1公开(公告)日: 2017-05-18
- 发明人: Xiaofeng LIU
- 申请人: ASML Netherlands B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 国际申请: PCT/EP2015/062135 WO 20161214
- 主分类号: G03F1/44
- IPC分类号: G03F1/44 ; G03F1/36 ; G06F17/50 ; G03F1/42
摘要:
Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus and for transferring the imaged portion of the design layout to the substrate by an etching process, which includes the following steps: determining a value of at least one evaluation point of the lithographic process for each of a plurality of variations of the etching process; computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, wherein the multi-variable cost function is a function of deviation from the determined values of the at least one evaluation point; and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a termination condition is satisfied. This method may reduce the need of repeated adjustment to the lithographic process when the etching process varies.
公开/授权文献
- US10191366B2 Etch variation tolerant optimization 公开/授权日:2019-01-29
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