Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.