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公开(公告)号：US11639902B1
公开(公告)日：2023-05-02
申请号：US17560304
申请日：2021-12-23
Inventor： Chia-Ting Lin , Jian-Long Ruan
IPC: G01R27/04 , G01R27/32 , G01N22/00 , G01R27/02 , G01R29/08 , G01F23/284 , G01F23/263 , G01F25/20
Abstract: A method of evaluating microwave characteristics includes the steps of: (A) measuring thermal diffusion features and microwave characteristics of at least three mode samples to obtain at least three data points, wherein the mode samples include identical constituents but at different ratios thereof; (B) obtaining a mathematical relation between the data points by linear regression; (C) measuring a thermal diffusion feature of a sample under test, wherein the sample under test and the mode samples include identical constituents; and (D) substituting the thermal diffusion feature of the sample under test into the mathematical relation to evaluate a microwave characteristic of the sample under test. The method is applicable to a ceramic material to evaluate microwave characteristics of the ceramic material.
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公开(公告)号：US09978590B1
公开(公告)日：2018-05-22
申请号：US15604114
申请日：2017-05-24
Inventor： Jian-Long Ruan , Shyh-Jer Huang , Hsin-Chieh Yu , Yang-Kuo Kuo
IPC: H01L21/02 , H01L21/30 , H01L21/306
CPC classification number: H01L21/0254 , H01L21/02376 , H01L21/02378 , H01L21/02389 , H01L21/02414 , H01L21/0243 , H01L21/02444 , H01L21/02485
Abstract: A method of manufacturing an epitaxiable heat-dissipating substrate comprises the steps of (A) forming a roughened surface on a substrate made of a polycrystalline or amorphous material with a high thermal conductivity coefficient; (B) forming a flat layer on the roughened surface; and (C) forming a buffer layer on the flat layer. The flat layer reduces the surface roughness of the substrate, and then the buffer layer functions as a base for epitaxial growth, thereby being directly applicable to production of semiconductor devices which are flat and capable of isotropic epitaxial growth.
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公开(公告)号：US20210202782A1
公开(公告)日：2021-07-01
申请号：US16727846
申请日：2019-12-26
Inventor： Yung-Han Huang , Chung-Yen Lu , Jian-Long Ruan
IPC: H01L31/18 , H01L31/0336 , H01L31/0368 , H01L31/109 , H01L31/0224
Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
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公开(公告)号：US20210005974A1
公开(公告)日：2021-01-07
申请号：US16703872
申请日：2019-12-05
Inventor： Jian-Long Ruan , Shyh-Jer Huang , Yang-Kuo Kuo
Abstract: The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.
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公开(公告)号：US20170140969A1
公开(公告)日：2017-05-18
申请号：US14943290
申请日：2015-11-17
Inventor： Yang-Kuao Kuo , Yi-Hsiuan Yu , Jian-Long Ruan
IPC: H01L21/683
CPC classification number: H01L21/6833 , H01J37/3244 , H01J37/32715 , H01L21/6831 , H01L21/68757 , H02N13/00
Abstract: Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.
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Patent Agency Ranking
公开(公告)号：US11049993B1
公开(公告)日：2021-06-29
申请号：US16727846
申请日：2019-12-26
Inventor： Yung-Han Huang , Chung-Yen Lu , Jian-Long Ruan
IPC: H01L31/18 , H01L31/0336 , H01L31/0224 , H01L31/109 , H01L31/0368
Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
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公开(公告)号：US09972520B2
公开(公告)日：2018-05-15
申请号：US14943290
申请日：2015-11-17
Inventor： Yang-Kuao Kuo , Yi-Hsiuan Yu , Jian-Long Ruan
IPC: H01T23/00 , H01L21/683 , H01J37/32 , H02N13/00
CPC classification number: H01L21/6833 , H01J37/3244 , H01J37/32715 , H01L21/6831 , H01L21/68757 , H02N13/00
Abstract: Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.
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公开(公告)号：US11056796B2
公开(公告)日：2021-07-06
申请号：US16703872
申请日：2019-12-05
Inventor： Jian-Long Ruan , Shyh-Jer Huang , Yang-Kuo Kuo
Abstract: The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.
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公开(公告)号：US10711342B2
公开(公告)日：2020-07-14
申请号：US15840550
申请日：2017-12-13
Inventor： Jian-Long Ruan , Shyh-Jer Huang , Yang-Kuo Kuo
Abstract: A method of producing a secondary lens with hollow nano structures comprises the following steps (a) forming a polycrystalline seed layer on the surface of a lens; (b) growing a plurality of nano-rod structures over the polycrystalline seed layer in a random arrangement; (c) removing the portion of the seed layer where the nano-rod structure does not grow so that the surface of the lens therebeneath is exposed to outside; (d) sputtering a ceramic material layer over the plurality of nano-rod structures and the exposed surface portion of the lens; (e) removing the plurality of nano-rod structures and leaving a ceramic material layer having a plurality of hollow nano-rod structures in a random arrangement. A layer with hollow nano structures is formed on the surface of a lens wherein the hollow nano structures have the effect of scattering light and can improve the uniform illuminance of a secondary lens.
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10.发明申请公开(公告)号：US20190177833A1
公开(公告)日：2019-06-13
申请号：US15840550
申请日：2017-12-13
Inventor： Jian-Long Ruan , Shyh-Jer Huang , Yang-Kuo Kuo
Abstract: A method of producing a secondary lens with hollow nano structures comprises the following steps (a) forming a polycrystalline seed layer on the surface of a lens; (b) growing a plurality of nano-rod structures over the polycrystalline seed layer in a random arrangement; (c) removing the portion of the seed layer where the nano-rod structure does not grow so that the surface of the lens therebeneath is exposed to outside; (d) sputtering a ceramic material layer over the plurality of nano-rod structures and the exposed surface portion of the lens; (e) removing the plurality of nano-rod structures and leaving a ceramic material layer having a plurality of hollow nano-rod structures in a random arrangement. A layer with hollow nano structures is formed on the surface of a lens wherein the hollow nano structures have the effect of scattering light and can improve the uniform illuminance of a secondary lens.
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