An object is to provide a method for forming a resist pattern able to form a resist pattern, in which the resist shape is favorable, the occurrence of resist footing can be reduced, and the adherence and the aspect ratio are improved; and provided is a method for forming a resist pattern comprising a step of forming a photosensitive resin layer on a substrate using a photosensitive resin composition for projection exposure; a step of exposing the photosensitive resin layer to active light projecting an image of a photomask through a lens; and a step of removing an unexposed part of the photosensitive resin layer from the substrate by development, wherein the photosensitive resin composition for projection exposure comprises an (A) binder polymer, a (B) photopolymerizing compound having an ethylenically unsaturated bond, and a (C) photopolymerization initiator; and a light transmittance of the photosensitive resin layer at a wavelength of 365 nm is not less than 58.0% and not more than 95.0%.