- 专利标题: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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申请号: US14968517申请日: 2015-12-14
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公开(公告)号: US20170170145A1公开(公告)日: 2017-06-15
- 发明人: CHEN-HUA YU , CHI-HSI WU , DER-CHYANG YEH , HSIEN-WEI CHEN , AN-JHIH SU , TIEN-CHUNG YANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L25/00
摘要:
A semiconductor structure includes a first die, a second die horizontally disposed adjacent to the first die, a third die disposed over the first die and the second die, and a first dielectric material surrounding the first die and the second die, wherein a portion of the first dielectric material is disposed between the first die and the second die, and the third die is disposed over the portion of the dielectric.
公开/授权文献
- US10510715B2 Semiconductor structure and manufacturing method thereof 公开/授权日:2019-12-17
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