- 专利标题: PLASMA PROCESSING APPARATUS AND METHOD THEREFOR
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申请号: US15444775申请日: 2017-02-28
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公开(公告)号: US20170178871A1公开(公告)日: 2017-06-22
- 发明人: Shogo OKITA
- 申请人: Panasonic Intellectual Property Management Co., Ltd.
- 优先权: JP2013-228097 20131101
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01L21/683 ; H01L21/3065 ; H01L21/67
摘要:
A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. The carrier is placed on an electrode unit of a stage provided in a chamber. The electrode unit is cooled by a cooling section configured to cool the electrode unit. An upper face of the electrode unit is at least as large as the back side of the carrier. The holding sheet and the frame are cooled effectively by the heat transfer to the stage.
公开/授权文献
- US11355323B2 Plasma processing apparatus and method therefor 公开/授权日:2022-06-07
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